▎ 摘　　要

NOVELTY - The memory has a floating gate layer (204) which covers a side of a barrier layer (203) facing away from a gate (202). A tunnel layer (205) covers the side of the floating gate layer facing away from the barrier layer. The channel layer (206) covers the side of the tunnel layer facing away from the floating gate layer. An isolation insulating dielectric layer (207) covers a portion of a side of the channel layer facing away from the tunneling layer. The source electrode and the drain electrode cover the portion of the side of the channel layer facing away from the tunneling layer. The source electrode and the drain electrode are arranged on opposite sides of the isolation insulating dielectric layer, such that the materials of the gate electrode, the blocking layer, the floating gate layer, the tunneling layer, the channel layer and the isolation insulating dielectric layer are two-dimensional materials. USE - Floating gate memory. ADVANTAGE - The power consumption of the floating gate memory can be reduced. The erasing speed and reliability of the memory are improved. The interface defect and threshold voltage of memory are reduced and the erasure speed of memory is improved by using the two-dimensional material of the channel layer without hanging key. The channel layer is formed with isolation insulating dielectric layer so as to avoid the oxidization of channel layer by air and to improve the reliability of memory. The barrier layer, floating gate layer, tunneling layer, channel layer and the isolation insulation medium layer are made of two dimensional material, so that the interface defect, threshold voltage, power consumption and power loss of memory can also be reduced effectively. The leakage current can be prevented by the blocking layer. The floating gate loss memory is provided with high reliability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing a floating gate memory. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the floating gate memory. 200Dried substrate 201Insulating dielectric layer 202Gate 203Blocking layer 204Floating gate layer 205Tunneling layer 206Channel layer 207Isolation insulating dielectric layer 208Source electrode 209Drain electrode 210Non-contact gate contact material layer