▎ 摘　　要

NOVELTY - Preparation of a patterned graphene material comprises cleaning a silicon carbide (SiC) wafer using plasma-enhanced chemical vapor deposition (PECVD), and depositing silicon dioxide (SiO2) layer; coating a photoresist layer, and patterning; placing the samples in a quartz tube, and heating to 750-1150 degrees C; padding carbon tetrachloride (CCl4) in the flask, heating to 60-80 degrees C, and reacting for 20-100 minutes to generate carbon film; placing in a buffered hydrofluoric acid solution; carrying out electron beam deposition of nickel film; exposing to 20-100 mL/minute argon gas; and patterning. USE - Method for the preparation of a patterned graphene material for transistor. ADVANTAGE - Patterning the graphene does not need photo-etching, and can be directly carried out by electrode deposition. The method achieves high conversion speed, and produces a transistor with high mobility. DETAILED DESCRIPTION - Preparation of a patterned graphene material comprises: (A) cleaning an SiC wafer to remove surface contaminants; (B) cleaning the SiC wafer surface using PECVD, and depositing 0.4-1.2 mu m thick SiO2 layer using argon gas as a mask; (C) coating a photoresist layer on the SiO2 mask surface, carving to expose the SiC surface, and forming a pattern with the shape of a window; (D) placing the samples in a quartz tube, connecting the quartz tube with a three-mouth flask, water bath, a resistance furnace, and a reactor, and heating the quartz tube to 750-1150 degrees C; (E) padding CCl4 in the flask, heating to 60-80 degrees C, passing 40-90 mL/minute argon gas in the flask, reacting the CCl4 and SiC for 20-100 minutes, and generating carbon film; (F) placing the carbon film in a buffered hydrofluoric acid solution to remove the pattern other than the image of SiO2; (G) carrying out electron beam deposition of 350-600 nm nickel film on the carbon film as target sample; (H) exposing the film to 20-100 mL/minute argon gas at 900-1100 degrees C for 10-20 minutes; and (I) patterning sample by placing in a hydrochloric acid and copper sulfate mixed solution to remove the nickel film.