▎ 摘　　要

NOVELTY - The method involves selecting a silicon carbide substrate. Nitrogen ions are injected with preset depth and preset concentration to a back surface of the substrate. A graphene or epitaxially growing graphene is transferred on a front surface of the substrate to form a graphene. An gold film is deposited on the graphene of the graphene. A nickel metal is sputtered on the back surface of the substrate to form a back electrode. A first transfer electrode pattern is formed on the gold film by a first photoresist photo etching process. A plasma etching process is used to etch the graphene not covered by the gold film. A second transfer electrode pattern is formed on the substrate. A gold material is deposited on the gold film out of the second transfer electrode pattern. The second transfer electrode pattern is stripped to form a front electrode. An annealing treatment is performed to finish a preparation of silicon carbide-based ohmic contact with the graphene as a diffusion barrier layer. USE - Silicon carbide-based ohmic contact graphene preparation method. ADVANTAGE - The method enables performing the annealing treatment to finish the preparation of the silicon carbide-based ohmic contact with the graphene as the diffusion barrier layer, thus improving the contact of a resistance diffusion and electro migration and improving stability and service life of a power device. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram of a silicon carbide-based ohmic contact graphene preparation method.(Drawing includes non-english language text).