▎ 摘　　要

NOVELTY - Manufacturing a graphene electronic device involves forming a metal compound layer and a catalyst layer on a substrate (310), where the catalyst layer includes a metal element in the metal compound layer; growing a graphene layer on the catalyst layer; and converting the catalyst layer into a portion of the metal compound layer. The method also involves forming source and drain electrodes (340,350) on the graphene layer; forming an insulating layer on the graphene layer; and forming a gate electrode (360) on the insulating layer. USE - For manufacturing a graphene electronic device (claimed). ADVANTAGE - The catalyst layer is used for growing the graphene layer can be combined with another element to form a semiconductor or an insulator that forms a part of the graphene electronic device. Therefore, the catalyst layer can not be removed and a process of forming a separate semiconductor layer of an insulating layer instead of the metal compound layer can be omitted, thereby simplifying the manufacturing process of the electronic device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for graphene electronic device comprising a metal compound layer on a substrate; and a graphene layer on the substrate, where the metal compound layer includes a metal element configured to serve as a catalyst for growing the graphene layer. DESCRIPTION OF DRAWING(S) - The figure shows a schematic sectional view of a thin film transistor. Thin film transistor (300) Substrate (310) Bottom insulating layer (320) Semiconductor layer (330) Source and drain electrodes (340,350) Gate insulating layer (360) Gate electrode (370)