• 专利标题:   Semiconductor device used to manage electromagnetic waves contains at least one conductive floating gates superimposed on and/or embedded within conducting channel for managing electromagnetic radiation within device.
  • 专利号:   US2021057534-A1
  • 发明人:   SHUR M, MEYER D J
  • 专利权人:   US SEC OF NAVY
  • 国际专利分类:   H01L023/552, H01L027/146, H01L029/423, H01L029/66, H01L029/788
  • 专利详细信息:   US2021057534-A1 25 Feb 2021 H01L-029/423 202133 English
  • 申请详细信息:   US2021057534-A1 US928243 14 Jul 2020
  • 优先权号:   US890627P, US928243

▎ 摘  要

NOVELTY - Semiconductor device comprises at least one conductive floating gates (204) superimposed on and/or embedded within a conducting channel (203) for managing electromagnetic radiation within the device, where each conductive floating gate has a size smaller than a mean free path of electrons in the semiconductor device. USE - The semiconductor device is useful for managing electromagnetic waves (claimed). ADVANTAGE - The device: improves the coupling efficiency; and eliminates the parasitic gate resistance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for managing electromagnetic waves in a semiconductor device. DESCRIPTION OF DRAWING(S) - The figure shows a block schematics view of a semiconductor device having at least one asymmetrical conductive floating gates in a one or two-dimensional array superimposed on a conducting channel. Conducting channel (203) Conductive floating gates (204) Source (220) Drain (230)