▎ 摘　　要

NOVELTY - The method involves forming dielectric layer (120), metal catalytic layer (130) and graphene layer (140) on the silicon substrate (110). The dielectric layer (150) is formed on the graphene layer. The silicon substrates (110,210) are welded so that the dielectric layer (150) and silicon substrate (210) are provided in opposite directions such that the dielectric layer (120) and metal catalytic layer are removed. The ion injected into silicon substrate is formed of hydrogen ion, and helium ion. USE - Manufacture method of graphene substrate (claimed). ADVANTAGE - The defect in the graphene layer can be suppressed. The graphene substrate can be manufactured efficiently with simple process and shortened fabrication time. The surface flatness of the graphene substrate can be improved excellently. The productivity of graphene substrate can be improved with reduced manufacturing cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for graphene substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the graphene substrate. Silicon substrates (110,210) Dielectric layers (120,150,220) Metal catalytic layer (130) Graphene layer (140)