• 专利标题:   Photodetector of mixed plasma waveguide, has heterojunction whose upper surface is provided with second electrode where portion of graphene film extends away from silicon waveguide and is in contact with upper surface of first electrode.
  • 专利号:   CN111952400-A
  • 发明人:   HUANG X, ZHANG X, LIANG Y
  • 专利权人:   UNIV SOUTH CHINA NORMAL
  • 国际专利分类:   H01L031/0232, H01L031/0336, H01L031/109
  • 专利详细信息:   CN111952400-A 17 Nov 2020 H01L-031/109 202001 Pages: 7 Chinese
  • 申请详细信息:   CN111952400-A CN10641914 06 Jul 2020
  • 优先权号:   CN10641914

▎ 摘  要

NOVELTY - The photodetector has a silicon waveguide (500) and a first metal electrode (200) that are laid on upper surface of a substrate (600). The upper surface of the silicon waveguide is provided with a heterojunction composed of a black arsenic phosphorus film (400) and a graphene film (300) in contact. The upper surface of the heterojunction is provided with a second metal electrode (100). A portion of the graphene film extends away from the silicon waveguide and is in contact with the upper surface of the first metal electrode. The first and second metal electrodes are made of gold, silver or copper. The substrate is made of silicon dioxide. The graphene film is a single-layer graphene. USE - Photodetector of mixed plasma waveguide. ADVANTAGE - The photodetector has high response sensitivity and high detection efficiency. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the photodetector. Second metal electrode (100) First metal electrode (200) Graphene film (300) Black arsenic phosphorus film (400) Silicon waveguide (500) Substrate (600)