▎ 摘　　要

NOVELTY - An AA stacked graphene-diamond hybrid material comprises a diamond matrix; and AA stacked graphene configured to be converted in a certain thickness from a diamond (111) lattice plane cut by a surface of the diamond matrix due to an alternative loss of the diamond (111) lattice planes. USE - As AA stacked graphene-diamond hybrid material (claimed) useful in a next generation semi-conductor device (e.g. graphene-diamond single crystal substrate), an electrode material of a lithium battery with enhanced power density (e.g. graphene-diamond powder). ADVANTAGE - Using the process, an AA stacked graphene, having the interplanar spacing of 3.5-4.4 Angstrom which is greater than an existing AB stacked graphite (3.35 Angstrom ) by 5-30% and having excellent physical properties, can be formed on a diamond matrix with a simple process. Since there is no need to have time to generate a nucleus on the diamond matrix (i.e. incubation time), a second unit process is enabled, and the graphene surface can maintain flatness in an atomic level. The conversion of the diamond, differently from the growth of the graphene, does not need to have a latent period (several tens of minutes) of a nucleus formation required for growth, thus to enable a short time process in units of the second, similar to a general etching process. In addition, since the diamond surface is converted, the surface of the formed AA stacked graphene can maintain a flatness which is equivalent to an initial diamond surface (flat atomically). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a fabrication method for an AA stacked graphene-diamond hybrid material involving maintaining the diamond matrix within a temperature range having a stable graphene phase in a hydrogen gas atmosphere such that a surface of the diamond matrix in a certain thickness is converted into AA stacked graphene due to an alternative loss of (111) lattice planes cut by the surface of the diamond matrix.