▎ 摘　　要

NOVELTY - Copper film annealing of silicon carbide substrate in chlorine involves etching the silicon carbide substrate in hydrogen at a flow rate is 80 L/minute to remove silicon carbide surface scratches, producing high periodic smooth step-shaped nano steppes in the reaction chamber at 850-900 degrees C, introducing silicon hydride, argon gas and chlorine, producing the carbon film and the silicon carbide reaction, forming a carbon film on a copper film, plating a copper layer 220-360 nm thick using the graphene growth device, introducing argon gas, and annealing. USE - Copper film annealing of silicon carbide substrate in chlorine used in synthesizing graphene. DETAILED DESCRIPTION - Copper film annealing of silicon carbide substrate in chlorine involves cleaning the surface of the silicon carbide to remove organic and inorganic chemical contaminants in the reaction chamber of the graphene growth device at 13.3 Pa, raising temperature to 1500-1600 degrees C for 15-30 minutes, etching the silicon carbide substrate in hydrogen at a flow rate is 80 L/minute to remove silicon carbide surface scratches, producing high periodic smooth step-shaped nano steppes in the reaction chamber at 850-900 degrees C, introducing silicon hydride gas to residual compound, removing silicon carbide, surface hydrogen etching, adjusting heat source power of the graphene growth device at 700-1000 degrees C, opening the vent valve, introducing argon gas and chlorine, mixing in the mixing chamber, connecting the quartz tube reaction chamber to a gas channel containing chlorine gas for 4 minutes to produce the carbon film and the silicon carbide reaction, forming a carbon film on a copper film by PVD, plating a copper layer 220-360 nm thick using the graphene growth device, introducing argon gas at 900-1200 degrees C, annealing for 15-25 minutes, carbon film re-composition into grapheme and taking the graphene generated in the ferric chloride solution to remove the copper film. DESCRIPTION OF DRAWING(S) - The drawing is a flowchart of the graphene preparation process (Drawing includes non-English language text).