▎ 摘　　要

NOVELTY - The FET has two gold electrodes (4) covered with a silicon layer (1), a silicon/silicon dioxide composite wafer silicon dioxide layer (2) and a grapheme layer (3) that are separated from each other. A cadmium selenide quantum point layer (5) is arranged between the gold electrodes. Diameter of the cadmium selenide quantum point layer is 3-8 nm. Thickness of the silicon/silicon dioxide composite wafer silicon dioxide layer is 30-300 nm. Thickness of the cadmium selenide quantum point layer is 10-600 nm. Thickness of the silicon layer is 200 um. USE - Graphene optical FET. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene optical FET manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene optical FET. Silicon layer (1) Silicon/silicon dioxide composite wafer silicon dioxide layer (2) Grapheme layer (3) Gold electrodes (4) Cadmium selenide quantum point layer (5)