▎ 摘　　要

NOVELTY - The method involves patterning a trench in a dielectric (102), forming an interconnect in the trench embedded in the dielectric, and forming a wrap-all-around graphene barrier surrounding the interconnect. The wrap-all-around graphene barrier surrounding the interconnect is formed by depositing a graphene layer (1102) on top of the interconnect, and annealing the interconnect and the graphene layer under conditions sufficient to diffuse carbon atoms from the graphene layer to form a buried graphene layer at an interface between the dielectric and the interconnect (1504). The graphene layer and the buried graphene layer form the wrap-all-around graphene barrier layer surrounding the interconnect. USE - Forming method of interconnect structure. ADVANTAGE - Reduces line resistance, and prevents diffusion of the copper into the surrounding dielectric since the copper interconnects require the use of a barrier layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an interconnect structure. DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional diagram of the graphene layer having been deposited on top of the interconnect, and a second dielectric having been deposited onto the (first) dielectric covering the interconnect/graphene layer. Dielectric (102) Metal liner (502) Graphene layer (1102) Fill metal (1502) Interconnect (1504)