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  • 专利标题:   Improvement of graphene nanodevice spin filter effect comprises growing graphene in base plate surface, cutting via electron beam lithography, connecting strip to electrodes, regulating electric field and measuring spin filter efficiency.
  • 专利号:   CN104157785-A
  • 发明人:   TANG G, HUANG Y
  • 专利权人:   UNIV CHANGSHA SCI TECHNOLOGY
  • 国际专利分类:   B82Y040/00, C01B031/04, G11C011/16, H01L043/12
  • 专利详细信息:   CN104157785-A 19 Nov 2014 H01L-043/12 201507 Pages: 10 Chinese
  • 申请详细信息:   CN104157785-A CN10369166 30 Jul 2014
  • 优先权号:   CN10369166

▎ 摘　　要

NOVELTY - Improvement of graphene nanodevice spin filter effect comprises growing graphene in base plate surface, cutting via electron beam lithography, connecting strip to electrodes, regulating electric field and measuring spin filter efficiency. USE - Method for improving graphene nanodevice spin filter effect (claimed).