• 专利标题:   Wideband absorption enhancement structure infrared detector used for sensing and obtaining target infrared radiation information, comprises substrate layer, heavily doped reflective layer, buffer layer, electrodes, type II superlattice layer, asymmetric microstructure array layer and graphene layer.
  • 专利号:   CN114373821-A
  • 发明人:   XIONG W, WEI X, XIAO L, SHI H, SUN T, ZHU P
  • 专利权人:   CHINESE ACAD SCI CHONGQING GREEN INTEL
  • 国际专利分类:   H01L031/0216, H01L031/0304, H01L031/0352, H01L031/102, H01L031/18
  • 专利详细信息:   CN114373821-A 19 Apr 2022 H01L-031/102 202253 Chinese
  • 申请详细信息:   CN114373821-A CN10027868 11 Jan 2022
  • 优先权号:   CN10027868

▎ 摘  要

NOVELTY - A wide band absorption enhancement structure type II superlattice infrared detector comprises a substrate layer, a heavily doped reflective layer epitaxially grown on the substrate layer, a buffer layer epitaxially grown on the heavily doped reflective layer, and an electrode (A) and a type II superlattice layer provided on the buffer layer, and an electrode (B) and an asymmetric microstructure array layer provided on the type II superlattice layer, such that the electrode (B) surrounds the asymmetric microstructure array layer, and a graphene layer covering the electrode (B) and the asymmetric microstructure array layer. USE - Wide band absorption enhancement structure type II superlattice infrared detector is used for sensing and obtaining target infrared radiation information for all-weather work and harsh environments. ADVANTAGE - The detector has wide band absorption and enhanced function, short manufacturing period and low cost, and is suitable for enlarging production. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the wide band absorption enhancement structure type II superlattice infrared detector, which involves epitaxially growing heavily doped reflective layer on the substrate, epitaxially growing buffer layer on the heavily doped reflective layer, epitaxially growing a P-doped layer, intrinsic absorption layer, N-doped layer and contact layer intrinsic absorber layer, N-doped layer and contact layer, transferring cell mesa mask pattern to the contact layer, wet-etching buffer layer to obtain type II superlattice unit mesa, preparing electrode (A) on the buffer layer and electrode (B) in the area around the type II superlattice unit mesa, forming asymmetric microstructure array in the intermediate region of the type II superlattice unit mesa, and covering graphene film on the electrode (B) and the asymmetric microstructure array. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the infrared detector. (Drawing includes non-English language text)