• 专利标题:   Optical tantalum state enhanced graphene photoelectric detector, has detector main body provided with P-type high-doped silicon sheet, metal reflector, insulating layer, medium protective layer and medium Bragg reflector.
  • 专利号:   CN112652669-A
  • 发明人:   LIU F, ZHAO Y, CAO J, SHI X, LIU D, HE X
  • 专利权人:   UNIV SHANGHAI NORMAL
  • 国际专利分类:   H01L031/0232, H01L031/028, H01L031/113, H01L031/18
  • 专利详细信息:   CN112652669-A 13 Apr 2021 H01L-031/0232 202139 Pages: 9 Chinese
  • 申请详细信息:   CN112652669-A CN11551857 24 Dec 2020
  • 优先权号:   CN11551857

▎ 摘  要

NOVELTY - The detector has a detector main body provided with a P-type high-doped silicon sheet (1), a metal reflector (2), an insulating layer (3), a photosensitive layer (4), a drain source electrode, a medium protective layer (5) and a medium Bragg reflector (6). The photosensitive layer is made of two-dimensional material or organic photoelectric film, graphene, molybdenum disulfide, black phosphorus, perovskite and quantum dot film, where a material of the metal reflector comprises silver or aluminum. The insulating layer and the medium protective layer are niobium oxide films. USE - Optical tantalum state enhanced graphene photoelectric detector. ADVANTAGE - The detector improves light absorption capability of graphene, solves problem of low light response rate of pure graphene photoelectric detector and realizes photoelectric detection of different response frequency and bandwidth so as to satisfy different application requirements. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an optical tantalum state enhanced graphene photoelectric detector manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of an optical tantalum state enhanced graphene photoelectric detector. (Drawing includes non-English language text). P-type high-doped silicon sheet (1) Metal reflector (2) Insulating layer (3) Photosensitive layer (4) Drain source electrode, a medium protective layer (5) Medium Bragg reflector (6)