▎ 摘　　要

NOVELTY - The device (100) has an insulating layer (110) enclosing a lower electrode (120). A graphene layer (130) is formed on the lower electrode. A phase change material layer (140) is formed on the graphene layer and the insulating layer. An upper electrode (150) is placed on the phase change material layer. The phase change material layer comprises germanium antimony tellurium (GST) material. The graphene layer covers the lower electrode and covers a part of the insulating layer. Width of the graphene layer is equal to width of the lower electrode. USE - Phase change memory device for use in microelectronic devices such as integrated circuits. ADVANTAGE - The device heats phase change material at small amount of current to be changed into a crystalline state or an amorphous state so as to reduce power consumption, while reducing loss of heat transferred to the phase change material layer. The graphene layer is formed between the phase change material layer and the lower electrode to efficiently transfer heat energy formed from the lower electrode to the phase change material layer so as to lower driving current of the memory device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for fabricating a phase change memory device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a structure of a phase change memory device. Phase change memory device (100) Insulating layer (110) Lower electrode (120) Graphene layer (130) Phase change material layer (140) Upper electrode (150)