▎ 摘　　要

NOVELTY - The method involves forming a silicon dioxide insulating layer on a front surface of a silicon substrate layer. A silicon nitride insulating layer is formed on the silicon dioxide insulating layer. An electrode layer is formed on the silicon nitride insulating layer by a vacuum evaporation process. A sealing cavity is formed with the silicon substrate layer. A graphene pressure sensing layer is formed on the silicon nitride insulating layer by a one-step transfer process. A graphene pressure sensing layer is supported by a graphene film supporting layer. USE - Method for manufacturing a MEMS device monolithic integrated structure. ADVANTAGE - The method enables utilizing compression resistance characteristic of single layer graphene to realize pressure sensing, and realizing high sensitivity, wide bearing pressure range, small volume, convenient carrying, compatible semiconductor manufacturing process and mass production. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic block diagram of a MEMS device monolithic integrated structure.