▎ 摘　　要

NOVELTY - The FET (200) has a first channel layer (111), a second channel layer (112) that is provided on the first channel layer. A gate insulating layer (113) includes an insulative, high-k, two-dimensional material that are provided on the second channel layer. A gate electrode (114) is provided on the gate insulating layer. A first electrode (115) is electrically connected to the first channel layer and a second electrode (116) is electrically connected to the second channel layer.The first channel layer and the second channel layer comprises a semiconductor material having a two-dimensional crystal structure. USE - FET. ADVANTAGE - The field effect transistor has high mobility with expected reduced leakage current because the short channel effects are suppressed when two-dimensional materials are used as channels of field effect transistors. The gate insulating layer has a dielectric constant of greater than or equal to 10. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for producing FET. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a FET. First channel layer (111) Second channel layer (112) Gate insulating layer (113) Gate electrode (114) First electrode (115) Second electrode (116) FET (200)