• 专利标题:   Graphite thin film e.g. graphene, fabricating method, involves placing graphite fragment on substrate, and pulling graphite fragment on substrate to separate part of graphite fragment while or after applying electric field.
  • 专利号:   KR819458-B1
  • 发明人:   PARK Y W, YOO J S
  • 专利权人:   UNIV SEOUL NAT IND FOUND
  • 国际专利分类:   H01L021/283
  • 专利详细信息:   KR819458-B1 04 Apr 2008 H01L-021/283 200880 Pages: 6
  • 申请详细信息:   KR819458-B1 KR047008 15 May 2007
  • 优先权号:   KR047008

▎ 摘  要

NOVELTY - The method involves placing a graphite fragment on a substrate. An electric field is applied to the substrate. The graphite fragment on the substrate is pulled to separate a part of the graphite fragment while or after the electric field is applied. The graphite fragment placed on the substrate comes in contact with a pre-patterned substrate placed on the substrate by using an adhesive member. The peak voltage is added and passed through a gate electrode of an insulating layer of the substrate. USE - Method for fabricating a graphite thin film e.g. graphene or few layer graphite (FLG) (all claimed). ADVANTAGE - The method positions the graphite thin film in a desired position on the relatively pre-patterned substrate by using electrostatic force and avoids depending upon the quality of highly oriented pyrolytic graphite (HOPG) and cellophane tape. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a photographic view of a graphite thin film.