▎ 摘　　要

NOVELTY - The method involves providing a heat sink substrate and pre-treating the heat sink substrate. A graphene thin film layer is formed on the heat sink substrate. A metal film layer is formed on the graphene thin film layer. A hot pressing treatment is carried out to the graphene thin film layer and the metal film layer. The graphene thin film layer is made of graphene oxide and graphene oxide. USE - Graphene thin film composite copper base heat sink manufacturing method. ADVANTAGE - The method enables to prepare graphene film composite copper-based heat sink, which enhances the planar heat-conducting capability of the heat sink material, inhibits the heat expansion of the chip, prolongs the service life of the chip, improves the welding performance of the heat sink material, and improves the bonding force of the graphene thin film layer and the heat sink substrate by the hot pressing process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for graphene thin film composite copper base heat sink. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for manufacturing graphene thin film composite copper base heat sink (Drawing includes non-English language text).