• 专利标题:   Manufacture of graphene sheet involves laminating nickel thin film on silicon dioxide film provided on surface of silicon substrate, laminating fullerene thin film on nickel thin film, and annealing resultant laminated structure.
  • 专利号:   KR2017109938-A, KR1836386-B1
  • 发明人:   JOONGKEE L, WONCHANG C, HUNGI J, CHAIRUL H, JAEYOUNG W, JIYOUNG K, JOOMAN W, AYOUNG K
  • 专利权人:   KOREA INST SCI TECHNOLOGY
  • 国际专利分类:   C01B031/04, C23C014/06, C23C014/18, C23C014/24, C23C014/34, C23C014/58, C23C028/00
  • 专利详细信息:   KR2017109938-A 10 Oct 2017 C01B-031/04 201776 Pages: 13
  • 申请详细信息:   KR2017109938-A KR034183 22 Mar 2016
  • 优先权号:   KR034183

▎ 摘  要

NOVELTY - Manufacture of graphene sheet involves laminating a nickel thin film as a metal catalyst on a silicon dioxide film provided on a surface of a silicon substrate by sputtering method, laminating a thin film of fullerene using 60C fullerene as a precursor, on the nickel thin film by vacuum thermal evaporation step, and annealing the resultant laminated structure to obtain multilayered graphene sheet. USE - Manufacture of graphene sheet (claimed). ADVANTAGE - The method enables efficient, simple and environmentally-friendly manufacture of large-area graphene sheet without requiring the existing etching and transfer process.