▎ 摘　　要

NOVELTY - Carbon-based semiconductor material comprises reduced graphene oxide. The reduced graphene oxide is reduced so that the semiconductor material has a resistance/humidity variation of -15 to 15%. USE - The carbon-based semiconductor material is useful as a semiconductor layer of a device (claimed). ADVANTAGE - The carbon-based semiconductor material: is humidity insensitive material; and improves the humidity failure issue of actual carbon-based electronic devices. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) a device comprising a semiconductor layer consisting essentially of the carbon-based semiconductor material; and (2) making the carbon-based semiconductor material, comprising applying an ink comprising comprises graphene oxide in a solvent, to a surface of a substrate, drying the ink to produce a graphene oxide material or layer on the substrate, and sintering the material or layer at a temperature and for a period of time where the material or layer has a resistance/humidity variation of -5 to 5%.