▎ 摘　　要

NOVELTY - Preparing large-sized monocrystalline graphene and its continuous film, comprises utilizing chemical vapor deposition process in the presence of a carrier gas containing hydrogen, performing heat treatment of the metal substrate, catalytically cracking the metal substrate surface at high temperature using carbon source, controlling the concentration of hydrogen and carbon source and the growth temperature for growing large-sized monocrystalline graphene, and extending the growth time for preparing a continuous film formed by splicing the large-sized monocrystalline graphene grains. USE - The large-sized monocrystalline graphene and its continuous film are useful in graphene nanoelectronic devices, transparent conductive film, display and solar cell electrodes, gas sensor, photoelectric converters, electronic devices and photoelectric field. DETAILED DESCRIPTION - Preparing large-sized monocrystalline graphene and its continuous film, comprises taking metal substrate comprising copper and platinum as a growth substrate and hydrocarbon as carbon source, utilizing chemical vapor deposition process in the presence of a carrier gas containing hydrogen, performing heat treatment of the metal substrate, catalytically cracking the metal substrate surface at high temperature using carbon source, controlling the concentration of hydrogen and carbon source and the growth temperature for growing large-sized monocrystalline graphene, and extending the growth time for preparing a continuous film formed by splicing the large-sized monocrystalline graphene grains.