▎ 摘　　要

NOVELTY - Forming graphene, comprises: either providing a substrate and a carbon-containing reactant source in a chamber, and radiating a laser beam on the substrate to decompose the carbon-containing reactant source and form graphene over the substrate using carbon atoms generated by decomposition of the carbon-containing reactant source; or providing a silicon carbide (SiC) substrate in a chamber, radiating a laser beam on the SiC substrate and decomposing a surface of the SIC, and sublimating decomposed silicon atoms and form graphene on the SiC substrate using decomposed carbon atoms. USE - The method is useful for forming graphene, which is useful as electrode material or semiconductor material. ADVANTAGE - The method is capable of uniformly and continuously forming the graphene with high quality and large size. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) forming a graphene semiconductor device with a doping region, comprising bringing dopant-containing material into contact with graphene, and radiating a laser beam to form the doping region in the graphene; and (2) a graphene transistor, comprising a substrate, a graphene pattern formed over the substrate by first laser beam radiation, source/drain regions provided at ends of the graphene pattern by second laser radiation, a gate insulating film provided between the source/drain regions, and a gate electrode provided over the gate insulating film.