▎ 摘　　要

NOVELTY - Preparing a two-dimensional semiconductor field-effect transistor comprises (i) providing metal electrode pattern film, (ii) transferring the metal electrode pattern film onto the surface of the two-dimensional buffer material to obtain a metal electrode pre-patterned buffer material with a metal electrode pattern film bonded to the surface of the two-dimensional buffer material, (iii) using metal electrode pattern film as a mask, etching metal electrode pre-patterned buffer material to pattern the two-dimensional buffer material, (iv) transferring two-dimensional semiconductor material to the back gate electrode, and (v) transferring the metal/buffer material composite electrode to other surface of the two-dimensional semiconductor material in the two-dimensional semiconductor material/back gate electrode stack opposite to the surface the back gate electrode, placing the two-dimensional buffer material between the metal electrode and the two-dimensional semiconductor material. USE - The method for preparing a two-dimensional semiconductor field-effect transistor is useful for integrated circuit (claimed). ADVANTAGE - The method reduces the Schottky barrier by weakening the pinning of the Fermi level, and has good electrical properties. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a two-dimensional semiconductor field-effect transistor prepared above method.