▎ 摘　　要

NOVELTY - The electronic device has a defect-free graphene layer (12) that is deposited on a substrate (10). A semiconductor material is comprised of silicon or silicene, and deposited on the graphene layer, such that the epitaxial layers (14) of the semiconductor material are grow on the defect-free graphene layer. USE - Electronic device using graphene to grow semiconductors. ADVANTAGE - The substrate effectively withstands growth temperature without requiring limitation matching condition for epitaxial growth. The device is featured with improved conductivity, transparency, high atomic density, chemically inactivity property, high melting point, adaptability to different substrates, and easy lift-off capabilities by using graphene as an interfacial layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of growing semiconductors on hetero-substrates using graphene as interfacial layer. DESCRIPTION OF DRAWING(S) - The drawing shows the cross sectional view of the substrate and graphene interfacial layer. Substrate (10) Defect-free graphene layer (12) Epitaxial layers (14)