▎ 摘　　要

NOVELTY - The structure has a buffer layer (20) located on a substrate (10). A distributed Bragg reflector (30) is located on the buffer layer. A quantum dot saturable absorber (40) is provided in the distributed Bragg reflector. A graphene saturable absorber (50) is arranged in the quantum dot saturable absorber. The quantum dot saturable absorber is provided with a quantum dot structure (40a). The quantum dot structure is formed with a lower limiting layer, a quantum dot layer (402), an upper limiting layer and a spacer layer (404) according to direction far away from the distributed Bragg reflector. USE - Composite semiconductor saturable absorption mirror structure. ADVANTAGE - The structure improves thermal damage threshold and stability of optical properties of the saturable absorber, and achieves ultra-speed laser pulses with high-power at a short-pulse locked mode, a stable output repetition cycle, a narrow pulse width and short response time. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a composite semiconductor saturable absorption mirror structure. Substrate (10) Buffer layer (20) Distributed Bragg reflector (30) Quantum dot saturable absorber (40) Quantum dot structure (40a) Graphene saturable absorber (50) Quantum dot layer (402) Spacer layer (404)