▎ 摘　　要

NOVELTY - The forming method involves providing a substrate (21) comprising one or more electronic structures (23). A layer of perovskite (25) is provided overlaying one or more electronic structures of the substrate. A layer of photoresist material (27) is coated on the layer of perovskite. A mask (29) is aligned with the electronic structures of the substrate to pattern the photoresist material. The same etchant is used to remove sections of the patterned photoresist material and the perovskite underneath the sections of the photoresist material. USE - Forming method for apparatus comprising perovskite (claimed) e.g. GFET. ADVANTAGE - Uses two-dimensional material for enable formation of nanoelectronic devices. Provides barrier layer to protect perovskite and other components from oxygen, moisture or any other contaminants that may degrade apparatus. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic representation of the forming processes of an apparatus comprising perovskite. Substrate (21) Electronic structures (23) Perovskite (25) Photoresist material (27) Mask (29)