▎ 摘　　要

NOVELTY - The transistor has a substrate, a grid that is arranged on the substrate and an insulating layer that is arranged on the surface of the grid. A two-dimensional semiconductor layer is arranged on the insulating layer. A source electrode and a drain electrode are arranged on two-dimensional semiconductor layer. Two-dimensional semiconductor layer is a hetero-junction comprising graphene with few atomic layers and two-dimensional sulfide crystals with only a few atomic layers, which ensures the electrical performance of the thin film transistor. USE - Field effect transistor. ADVANTAGE - The method has a simple process and has lower requirements on the substrate. The device with a vertical structure is constructed and the size of the device is reduced due to the ultra-thin property of the material. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a mechanical stripping method.