▎ 摘　　要

NOVELTY - Epitaxial wafer with antistatic capability comprises substrate 1 and buffer layer 2 sequentially deposited on the substrate. An N-type doped gallium nitride layer 4, an electronic buffer layer, a stress release layer 6, a multi-quantum well layer 7, an electron blocking layer 8 and a P-type Gallium nitride layer 9, where the stress release layers is a periodic structure of the Indium-Gallium nitride sub-layer and the Gallium nitride sub -layer alternately growing, where, in the periodic structure, the thickness of the indium-gallium-silicon sub-layer is 1-2 nm, and the thickness range of the germanium-graphene sub layer is 46-60 nm. The stress release layer and the multi-Quantum well-layer have a V-type defect having a density of 6asterisk108cm-2 to 8asterisk108cm-2. USE - Epitaxial wafer for use in a light emitting diode (LED) i.e. electronic component, for converting electric energy into light energy (claimed). ADVANTAGE - The epitaxial wafer has high antistatic capability, by controlling the thickness of the GaN sub-layer in the stress release layer is 46-60 nm, increasing the density and size of the V-shaped defect in the LED epitaxially layer. The current density of the device under the high voltage impact is reduced, reducing the probability of device thermal breakdown, so as to improve the effect of anti-static capability. The growth time of the low-temperature growth layer is increased, the size of V-type defect is gradually increased. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of epitaxial wafer. Substrate (1) Buffer layer (2) N-type doped gallium nitride layer (4) Stress release layer (6) Multi-quantum well layer (7) Electron blocking layer (8)