▎ 摘　　要

NOVELTY - Preparing ultra three dimension graphene involves pressing the commercial three-dimensional foam metal into a thin sheet. The pretreatment of the foamed metal substrate is carried out, electrochemically deposited on the another metal and annealed in a chemical vapor deposition (CVD) tubular furnace for 0.5-2 hours at a high temperature of 800-1,100 degrees C to obtain an alloy. The alloy is subjected to electrochemical selective etching for 200-1,500 seconds by using an electrochemical three-electrode testing unit of voltage 0.2-1 volt. USE - Method for preparing ultra three dimension graphene used for growing the semiconductor material (claimed). ADVANTAGE - The method enables to prepare ultra three dimension graphene in simple manner, which has high specific surface area. DETAILED DESCRIPTION - Preparing ultra three dimension graphene involves pressing the commercial three-dimensional foam metal into a thin sheet. The pretreatment of the foamed metal substrate is carried out, electrochemically deposited on the another metal and annealed in a chemical vapor deposition (CVD) tubular furnace for 0.5-2 hours at a high temperature of 800-1,100 degrees C to obtain an alloy. The alloy is subjected to electrochemical selective etching for 200-1,500 seconds by using an electrochemical three-electrode testing unit of voltage 0.2-1 volt. The super three-dimensional alloy skeleton with a multi-layer multi-channel pore network structure is prepared. The graphene is grown on the corroded alloy by the chemical vapor deposition method to obtain the three-dimensional graphene/alloy. The three-dimensional graphene/alloy is placed in a mixed solution of 1 molar ferric chloride and 2 molar hydrochloric acid, while keeping the temperature of the solution constant. The alloy substrate is removed and rinsed with deionized water to obtain self-supporting ultra three dimension graphene.