• 专利标题:   Preparing ultra three dimension graphene used for growing semiconductor material, involves pressing commercial three-dimensional foam metal into thin sheet.
  • 专利号:   CN105836735-A
  • 发明人:   HAO Y, NING J, WANG D, ZHANG J, LU Q, MU M
  • 专利权人:   UNIV XIDIAN
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN105836735-A 10 Aug 2016 C01B-031/04 201671 Pages: 8 Chinese
  • 申请详细信息:   CN105836735-A CN10178422 25 Mar 2016
  • 优先权号:   CN10178422

▎ 摘  要

NOVELTY - Preparing ultra three dimension graphene involves pressing the commercial three-dimensional foam metal into a thin sheet. The pretreatment of the foamed metal substrate is carried out, electrochemically deposited on the another metal and annealed in a chemical vapor deposition (CVD) tubular furnace for 0.5-2 hours at a high temperature of 800-1,100 degrees C to obtain an alloy. The alloy is subjected to electrochemical selective etching for 200-1,500 seconds by using an electrochemical three-electrode testing unit of voltage 0.2-1 volt. USE - Method for preparing ultra three dimension graphene used for growing the semiconductor material (claimed). ADVANTAGE - The method enables to prepare ultra three dimension graphene in simple manner, which has high specific surface area. DETAILED DESCRIPTION - Preparing ultra three dimension graphene involves pressing the commercial three-dimensional foam metal into a thin sheet. The pretreatment of the foamed metal substrate is carried out, electrochemically deposited on the another metal and annealed in a chemical vapor deposition (CVD) tubular furnace for 0.5-2 hours at a high temperature of 800-1,100 degrees C to obtain an alloy. The alloy is subjected to electrochemical selective etching for 200-1,500 seconds by using an electrochemical three-electrode testing unit of voltage 0.2-1 volt. The super three-dimensional alloy skeleton with a multi-layer multi-channel pore network structure is prepared. The graphene is grown on the corroded alloy by the chemical vapor deposition method to obtain the three-dimensional graphene/alloy. The three-dimensional graphene/alloy is placed in a mixed solution of 1 molar ferric chloride and 2 molar hydrochloric acid, while keeping the temperature of the solution constant. The alloy substrate is removed and rinsed with deionized water to obtain self-supporting ultra three dimension graphene.