▎ 摘　　要

NOVELTY - Semiconductor device comprises a substrate (10), a first heat dissipation layer (20) provided on the substrate and extending in a first direction, and a metal layer (30) provided on the first heat dissipation layer and extending in the first direction. A width of the first heat dissipation layer in a second direction intersecting the first direction is greater than a width of the metal layer in the second direction. The first heat dissipation layer has a structure made of carbon atoms and includes among graphene, nanotubes, or a diamond structure. USE - Semiconductor device. ADVANTAGE - The semiconductor device including an electrode structure which has a high allowable current limit and a continuous current flow after a short circuit. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a semiconductor device. 10Substrate 20First heat dissipation layer 30Metal layer