▎ 摘　　要

NOVELTY - Epitaxial light-emitting diode (LED) comprises N polarity conversion layer and patterned graphite layer deposited on the N polity conversion layer. The material of the N polarization conversion layer is gallium nitride (GaN), and one side close to the patterned graphene layer is a nitrogen surface, and the graphene layer of the pattern is a graphene sheet. The patterned sheet is composed of multiple hexagonal sub graphene blocks. The central position of the portion of the sub graphene block is provided with a through hole. The through hole is used for exposing the N polarity conversion layer portion. USE - Epitaxial light-emitting diode (LED) used in LED chip (claimed). ADVANTAGE - The method enables to form a seed crystal at the hole, so that the subsequent growth of the GaN material can be better deposited on the graphene surface. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: An epitaxial growth method of the epitaxial LED, which involves: growing an N polarity conversion layer, wherein the material of the N polarity conversion layer is GaN, and one side close to the patterned graphite layer is a nitrogen surface; preparing a patterned graphite layer on the N-polarity conversion layer, firstly depositing graphene the N-polarity conversion layer, to obtain the graphene layer, and using the mask, and etching the through hole on the preset position of the graphene layer to obtain the patterned graphite layer, the through hole is used for exposing the N polarity conversion layer portion. A LED chip, which comprises the epitaxial LED.