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  • 专利标题:   Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.
  • 专利号:   WO2016149934-A1, JP2017512181-W, JP6190562-B2, US2018002831-A1, US10017878-B2
  • 发明人:   WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION, SHANGHAI INST MICROSYSTEM INFORMATION, SHANGHAI INST MICROSYSTEM INFORMATION, SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C30B023/00, C30B025/00, C30B029/02, B01J023/08, C01B032/15, C01B032/18, C01B032/182, C01B032/186, C23C014/06, C23C014/28, C23C016/26, C23C016/50, C30B023/02, C30B025/20, C30B025/04
  • 专利详细信息:   WO2016149934-A1 29 Sep 2016 C30B-029/02 201669 Pages: 22 Chinese
  • 申请详细信息:   WO2016149934-A1 WOCN075115 26 Mar 2015
  • 优先权号:   JP507054, WOCN075115, US14762012

▎ 摘　　要

NOVELTY - Method of growing graphene involves placing (S1) an insulated substrate in a growing cavity, heating (S2) the insulated substrate to a preset temperature and introducing a gas containing catalytic elements into the growing cavity, and pumping (S3) a carbon source to the growing cavity to grow a graphene thin film on the insulated substrate. USE - Method of growing graphene used in e.g. electronic devices, graphene transparent conducting films and transparent conducting coatings. ADVANTAGE - The method enables economical and efficient growing of high-quality graphene on substrate, aiding in batch production.