▎ 摘　　要

NOVELTY - A grid-type graphene FET preparing method involves depositing an aluminum layer on a silicon substrate as a sacrificial layer followed by spin-coating polyimide photoresist on the aluminum layer as a substrate of a flexible FET, and transferring a commercialized grapheme/polymethyl methacrylate thin film to titanium/gold electrode. The titanium/gold electrode is deposited on the polyimide substrate to form better ohmic contact followed by utilizing AZ 4620 photoresist as a mask layer for grapheme patterning and etching graphene through oxygen plasma. USE - Method for preparing a liquid grid-type graphene FET based on polyimide. ADVANTAGE - The method enables preparing a liquid grid-type graphene FET with reduced machining steps and surface decoration on surface of the graphene in a convenient manner. DETAILED DESCRIPTION - A grid-type graphene FET preparing method involves depositing an aluminum layer on a silicon substrate as a sacrificial layer followed by spin-coating polyimide photoresist on the aluminum layer as a substrate of a flexible FET, and transferring a commercialized grapheme/polymethyl methacrylate thin film to titanium/gold electrode. The titanium/gold electrode is deposited on polyimide substrate to form better ohmic contact followed by utilizing AZ 4620 photoresist as a mask layer for grapheme patterning, etching graphene through oxygen plasma, and manufacturing an insulating layer on the surface of the patterned graphene through the polyimide photoresist to form a liquid grid type structure. An INDEPENDENT CLAIM is also included for a method for detecting a liquid grid-type graphene FET.