▎ 摘　　要

NOVELTY - The method involves arranging the pretreated high temperature piezo wafer into a plasma chemical vapor deposition chamber. The chamber is closed, and the vacuum pump is activated. The pressure in the chamber is reduced to below 10-5 Torr. The protective gas and hydrocarbon compound gas pressure in the chamber is introduced. The vacuum heating furnace heating is started for opening the plasma source and performing constant temperature deposition, so as to obtain the graphene electrodes. USE - Method for preparing graphene electrode in high-temperature piezoelectric sensor. ADVANTAGE - The adhesion between the olefine film and the wafer is improved, and the excellent electrical conductivity of graphene film is achieved.