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  • 专利标题:   Method used for attaining graphene, involves forming graphene on catalyst metal, forming supporter, removing catalyst metal by wet etching using etchant, exposing graphene and transferring exposed graphene.
  • 专利号:   KR2013028582-A, KR1926485-B1
  • 发明人:   NA D H, YOON J H
  • 专利权人:   SAMSUNG TECHWIN CO LTD, HANWHA AEROSPACE CO LTD
  • 国际专利分类:   C01B031/02, H01B001/04
  • 专利详细信息:   KR2013028582-A 19 Mar 2013 C01B-031/02 201368 Pages: 10
  • 申请详细信息:   KR2013028582-A KR092232 09 Sep 2011
  • 优先权号:   KR092232

▎ 摘　　要

NOVELTY - Graphene is formed in side of a catalyst metal. A supporter is formed in a side of graphene in which the catalyst metal is not arranged. A portion of catalyst metal is removed by the wet etching using etchant (e1). The remaining portion of catalyst metal is removed by wet etching using etchant (e2), and the graphene is exposed. The exposed graphene is transferred to a target film. USE - Method used for attaining graphene.