▎ 摘　　要

NOVELTY - The bi-layer graphene channel (112) is formed on a bottom gate dielectric layer (110), and the source and drain contact electrodes are formed at ends of bi-layer graphene channel. A top gate dielectric layer (116) is formed over bi-layer graphene channel. The bottom and top gate electrodes (108,118) and bottom gate dielectric layer are configured to subject the bi-layer graphene channel to electric field while subjecting the bi-layer graphene channel to strain that reduces interlayer spacing in bi-layer graphene channel to create a bandgap in bi-layer graphene channel. USE - Method for forming bi-layer graphene transistor device. METALLURGY - The gate electrode is made of gold, palladium or platinum. ADVANTAGE - The combination of the strain and electric field inside the bi-layer graphene channel results in practical bandgap in the graphene channel thus leading to high on/off ratio required for digital switching applications. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the bi-layer graphene transistor device. Bottom gate electrode (108) Bottom gate dielectric layer (110) Bi-layer graphene channel (112) Top gate dielectric layer (116) Top gate electrode (118)