▎ 摘　　要

NOVELTY - A field effect transistor comprises a substrate (910); a graphene channel layer (930) on the substrate, where the graphene channel layer defines a slit (935); a source electrode and a drain electrode spaced apart from each other, where the source electrode and the drain electrode are configured to apply voltages to the graphene channel layer; a gate electrode (973) on the graphene channel layer; and a gate insulation layer (950) between the graphene channel layer and the gate electrode. USE - As field effect transistor (claimed). ADVANTAGE - The transistor effectively uses graphene having very high electric conductivity, high heat conductivity, and high elasticity as channel layer. The transistor has a high ON/OFF ratio of operation currents. The transistor exhibits improved quality due to the presence of graphene layer. DETAILED DESCRIPTION - A field effect transistor comprises a substrate (910); a graphene channel layer (930) on the substrate, where the graphene channel layer defines a slit (935); a source electrode and a drain electrode spaced apart from each other, where the source electrode and the drain electrode are configured to apply voltages to the graphene channel layer; a gate electrode (973) on the graphene channel layer; and a gate insulation layer (950) between the graphene channel layer and the gate electrode. The field effect transistor further comprises a potential barrier material filling the slit of the graphene channel layer, where the potential barrier material is configured to induce Fowler-Nordheim (F-N) tunneling through the graphene channel layer when a gate voltage is applied to the gate electrode. An INDEPENDENT CLAIM is included for a method of fabricating field effect transistor, involving: forming a graphene channel layer on a substrate; forming a slit in the graphene channel layer; forming a source electrode and a drain electrode that are spaced apart from each other, where the source and the drain electrode are configured to apply voltages to the graphene channel layer; forming a gate electrode on the graphene channel layer; forming a gate insulation layer between the graphene channel layer and the gate electrode; and filling the slit with a potential barrier material, where the potential barrier material is configured to induce Fowler-Nordheim (F-N) tunneling through the graphene channel layer when a gate voltage is applied to the gate electrode. The step of forming the slit includes using e-beam lithography. DESCRIPTION OF DRAWING(S) - The figure shows sectional view of field effect device. Substrate (910) Graphene channel layer (930) Slits (935) Gate insulating layers (950) First electrodes (971) Second electrodes (972) Gate electrodes (973)