▎ 摘　　要

NOVELTY - The method involves arranging a production line in a semiconductor device. A graphene probe contact pressure probe is established. Contact probe output pressure signal of the semiconductor device is detected. Electrical output signal of the semiconductor device is determined according to the contact probe output pressure signal of the semiconductor device. A pressure detecting unit is arranged with a contact pressure probe vertical drive unit. An electric detection unit is connected with a graphene sensing unit. USE - Semiconductor device graphene probe mass detecting method. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a semiconductor device graphene probe mass detecting method. '(Drawing includes non-English language text)'