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  • 专利标题:   Preparing sub-10 nano-stable graphene quantum dot involves placing boron nitride on a metal foil substrate, etching nano-holes on the boron nitride with a helium ion microscope, and using a chemical vapor deposition method.
  • 专利号:   CN110629190-A, CN110629190-B
  • 发明人:   LIU K, CHEN D, QIAO R, YU D
  • 专利权人:   UNIV PEKING
  • 国际专利分类:   B82Y040/00, C23C016/02, C23C016/26, C23C016/34
  • 专利详细信息:   CN110629190-A 31 Dec 2019 C23C-016/26 202011 Pages: 10 Chinese
  • 申请详细信息:   CN110629190-A CN11497178 07 Dec 2018
  • 优先权号:   CN11497178

▎ 摘　　要

NOVELTY - Preparing sub-10 nano-stable graphene quantum dot involves placing boron nitride on a metal foil substrate, etching nano-holes on the boron nitride with a helium ion microscope, using a chemical vapor deposition method, and growing graphene quantum dots in nanopores. USE - Method for preparing sub-10 nano-stable graphene quantum dot.