▎ 摘　　要

NOVELTY - The cell has a semiconductor III-V material structure (3) incorporating PN-photovoltaically active connection parts that are provided with a solar cell body and metal front and rear contacts (7), where the metal front and rear metal contacts are made from metal mesh parts. A graphene layer is arranged between an upper part of the semiconductor structure and the front metal contact. An upper layer of the semiconductor structure is designed as a window layer (4) or a combination of the window layer and a contact layer (5). The graphene layer is grown by chemical vapor deposition, where thickness of the graphene layer is about 0.34 nm. USE - Semiconductor III-V multi-junction solar cell. ADVANTAGE - The metal front and rear metal contacts are made from the metal mesh parts, and the graphene layer is arranged between the upper part of the semiconductor structure and the front metal contact, thus improving efficiency of the cell in a cost effective manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a semiconductor III-V multi-junction solar cell. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a semiconductor III-V multi-junction solar cell. Semiconductor III-V material structure (3) Window layer (4) Contact layer (5) Metal front and rear contacts (7) Anti-reflective layers (8)