• 专利标题:   Preparation of germanium-based graphene nanopore by providing germanium-based graphene, performing ion implantation on germanium-based graphene, generating point defects in graphene and annealing to etch point defects.
  • 专利号:   CN106276873-A, CN106276873-B
  • 发明人:   DI Z, MA J, ZHANG M, XUE Z, JIA P, WANG Z, WANG G, WANG X
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION, UNIV CHINESE ACAD SCI
  • 国际专利分类:   C01B031/04, C01B032/194
  • 专利详细信息:   CN106276873-A 04 Jan 2017 C01B-031/04 201711 Pages: 11 Chinese
  • 申请详细信息:   CN106276873-A CN10642661 08 Aug 2016
  • 优先权号:   CN10642661

▎ 摘  要

NOVELTY - Preparation of germanium-based graphene nanopore comprises providing germanium-based graphene comprising germanium substrate and graphene formed on germanium substrate, performing ion implantation on germanium-based graphene, generating point defects in graphene, annealing to etch the point defects, and obtaining the product. USE - Preparation of germanium-based graphene nanopore useful for single-layer film material. ADVANTAGE - The method provides germanium-based graphene nanopore with good quality and easy size adjustment and without etching graphene.