▎ 摘　　要

NOVELTY - Electrolyte for electrodepositing copper onto a semiconductor substrate, has a pH of 7-11 and comprises copper ions having a concentration of 0.1-2000 mM, at least one amine present having concentration of 0.5-5000 mM, 0.1-10 g/l graphene or a graphene oxide and a solvent. The amine is ethylenediamine, diethylenetriamine, triethylenetetramine or dipropylene triamine. The graphene or the graphene oxide are multi-sheets comprising 10-15 sheets and having a length of 300-600 nm. The electrolyte contains graphene oxide. USE - The electrolyte is useful for electrodepositing copper onto a semiconductor substrate (claimed), which is used in the manufacture of semiconductor devices, e.g. three-dimensional (3D) integrated circuits. ADVANTAGE - The electrolyte: reduces the keep out zone in an interposer, and reduces the electrical resistance of the TSVs in a 3D integrated circuit; reduces the thickness of the silicon wafers to limit the deformations created by the devices, which requires increasing the height/width ratio of the TSVs; improves the properties of the coating formed (regularity and thinness of the deposit, resistivity), optionally in the presence of a reference electrode; utilizes surface contacted to deposit the copper which is advantageously that of cavities whose opening width is greater than or equal to 0.5 μ m; and utilizes graphene into the electrolyte advantageously makes it possible to reduce the thermal expansion of the copper deposited and, consequently, to increase the density of TSVs in the 3D integrated circuit and allows improving the electrical performances of the devices by reducing the temperature increase points in the copper. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for manufacturing through silicon vias TSVs in a semiconductor device by implementing an electrodeposition step on a surface having a flat part and an assembly of at least one cavity of opening width greater than 0.5μ m.