▎ 摘　　要

NOVELTY - Preparing a metal wafer substrate involves forming metal thin film on the sapphire substrate by magnetron sputtering. The temperature of the sapphire substrate is kept below 50°C during the magnetron sputtering. USE - Method for preparing a metal wafer substrate. ADVANTAGE - The preparation method improves the degree of single crystallization of the metal wafer after annealing, and solves the problems of twin crystals and defects in the substrate, laying a foundation for the next step of growing high-quality graphene. The sputtering process is carried out at room temperature, so it is not necessary to lower the temperature to room temperature to open the magnetron sputtering chamber after sputtering, which avoids the problem that the wafer is easily oxidized. The time required for sputtering a wafer is reduced, and the production efficiency is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a metal wafer.