▎ 摘　　要

NOVELTY - The method involves preparing spiral graphene oxide material. Spin coating liquid is prepared. A substrate is cleaned by using de-ionized water, ethanol and de-ionized water for 25-30 minutes. The substrate is dried in a vacuum drying box after cleaning. Solvent remained on a surface of the substrate is removed to form a spin coating film. Mixed spin coating droplet is pasted on the cleaned substrate. Spin coating is performed for 20-40 second on the substrate at rotating speed of 1000-1500 rpm. A spiral graphene oxide doped bismuth ferrite film is formed on a surface of the substrate. A spin-coated substrate is placed in a vacuum oven at 30-50 degree Celsius. A metal upper electrode is prepared. The metal upper electrode is deposited on a surface of a spin coating thin film. USE - Spiral graphene oxide doping based bismuth ferrite memory resistance device manufacturing method. ADVANTAGE - The method enables increasing operability and industrial production to develop current type of a multifunctional electronic device and providing storage applications and ways for the electronic device with better performance. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a spiral graphene oxide doping based bismuth ferrite memory resistance device manufacturing method. (Drawing includes non-English language text).