▎ 摘　　要

NOVELTY - The graphene MOS transistor has semiconductor substrate such as monocrystalline silicon, polysilicon or silicon-on-insulator, which has gate region, source region, a drain region and trench region. The gate region and the trench region are positioned between source region and drain region. The gate region is arranged on the trench region while a gate medium is arranged between gate region and trench region. USE - Graphene metal oxide semiconductor (MOS) transistor for graphene-based integrated circuit. ADVANTAGE - The gate leakage current of the graphene MOS transistor can be reduced. The contact resistance between source/drain and trench can be reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacturing method of graphene (MOS) transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the graphene MOS transistor.