• 专利标题:   Manufacture of graphene pattern involves forming carrier on graphene growth substrate using photoresist, curing, placing sample in chemical vapor deposition heating furnace, carbonizing, forming protective film and etching.
  • 专利号:   CN110217783-A
  • 发明人:   DING A, TAO W, HU X, FAN S, WANG G
  • 专利权人:   UNIV NINGBO
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN110217783-A 10 Sep 2019 C01B-032/186 201977 Pages: 6 Chinese
  • 申请详细信息:   CN110217783-A CN10574912 28 Jun 2019
  • 优先权号:   CN10574912

▎ 摘  要

NOVELTY - Manufacture of graphene pattern involves forming a carrier on a graphene growth substrate using a photoresist, curing according to the design, removing the uncured photoresist in the carrier to produce a sample having the microstructure carrier, placing the sample in chemical vapor deposition heating furnace to generate a graphene pattern under the restriction of the microstructure carrier, carbonizing the photoresist to produce sample having graphene pattern structure, coating a protective film solution on the graphene of the sample, heating, forming a protective film on the sample, placing resulting sample in an etching solution of the graphene growth substrate, etching, cleaning, and placing the solution on the protective film to remove the protective film. USE - Manufacture of graphene pattern. ADVANTAGE - The graphene pattern can be produced economically with high precision by simple method.