• 专利标题:   Formation of MXene layer on metal layer involves forming metal layer on substrate, supplying gas containing X-type compound to metal layer, and forming MXene-based layer on the metal layer.
  • 专利号:   KR2022008503-A
  • 发明人:   SHIN U C
  • 专利权人:   SHIN U C
  • 国际专利分类:   C23C016/32, C23C016/04, C23C016/06, C23C016/26, C23C016/34, C23C028/00
  • 专利详细信息:   KR2022008503-A 21 Jan 2022 C23C-016/32 202211 Pages: 8
  • 申请详细信息:   KR2022008503-A KR086656 14 Jul 2020
  • 优先权号:   KR086656

▎ 摘  要

NOVELTY - Formation of MXene (two dimensional material) layer on a metal layer involves forming the metal layer on a substrate, and forming the MXene layer containing a metal nitride and/or carbide on the metal layer by supplying a gas containing carbon and/or nitrogen on the metal layer. USE - Formation of MXene layer on metal layer. ADVANTAGE - The method enables to form MXene on metal layer in a simple manner. DETAILED DESCRIPTION - Formation of MXene (two dimensional material) layer on a metal layer involves forming the metal layer on a substrate, and forming the MXene layer containing a metal nitride and/or carbide of formula: Mn+1Xn, where M is a metal, X is carbon and/or nitrogen and n is a natural number on the metal layer by supplying a gas containing carbon and/or nitrogen on the metal layer.