▎ 摘　　要

NOVELTY - The detector has a titanium dioxide nano-tube array (2) that is provided along a vertical direction on an upper surface of a P-type silicon substrate layer (1). The upper surface of the titanium dioxide nano-tube array is covered with an insulating layer (3). A double layered or three layered nitrogen-doped graphene section (4) is formed on the insulating layer. A metal electrode layer (5) is formed on the surface of the double layered or three layered nitrogen-doped graphene section. The boundary of the metal electrode layer is not beyond the boundary of the insulating layer. USE - Schottky junction UV photoelectric detector. ADVANTAGE - The simple structured schottky junction UV photoelectric detector is manufactured efficiently and easily at low cost. The detecting ability of the environmental-friendly UV photoelectric detector is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method for schottky junction UV photoelectric detector. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the UV photoelectric detector. P-type silicon substrate layer (1) Titanium dioxide nano-tube array (2) Insulating layer (3) Graphene section (4) Metal electrode layer (5)