▎ 摘　　要

NOVELTY - The detector has a liquid gallium-indium alloy electrode layer, an N-type silicon layer, a silicon dioxide layer and a graphene nano-wall electrode layer arranged orderly. A part of the graphene nano-wall electrode layer is contacted with the N-type silicon layer. Thickness of the N-type silicon layer is determined as about 10-500 microns. Thickness of the silicon dioxide layer is determined as about 100-500nm. Thickness of the graphene nano-wall electrode layer is determined as about 100nm-10 microns. Temperature of a room is detected by an infrared detector. USE - Graphene-based nanometer silicon wall/room temperature infrared detector. ADVANTAGE - The detector has high conductivity, low resistivity and excellent property, utilizes the graphene nano-wall electrode layer to absorb infrared light, and generates electron-hole pairs and a space electric field area. DETAILED DESCRIPTION - The N-type silicon layer is N type lightly doped monocrystalline silicon piece. An INDEPENDENT CLAIM is also included for a method for preparing preparation room-temperature infrared detector based on graphene nanowall/silicon. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene-based nanometer silicon wall/room temperature infrared detector.